PhD in Advanced Microelectronics Structural Analysis Using Dark-Field X-Ray Microscopy
Explore cutting-edge dark-field X-ray microscopy to analyze strain and defects in next-generation microelectronics at CEA-Leti.
Best for:Best for materials science PhD candidates with expertise in microscopy, nanotechnology, and computational modeling, seeking interdisciplinary research at the intersection of microelectronics and synchrotron techniques.
Overview
This PhD position focuses on leveraging dark-field X-ray microscopy (DFXM) to investigate advanced microelectronic architectures under thermomechanical stress. The project, based at CEA-Leti’s Nanocharacterization platform, will develop a methodology for multiscale strain analysis in complex devices without sample destruction. Collaborations with ESRF’s ID03 beamline and complementary techniques like TEM and Raman spectroscopy will enable 3D mapping of strain, orientation, and buried defects. The research aims to enhance reliability and design optimization for quantum technologies, photonics, and energy-efficient microelectronics. The successful candidate will contribute to both fundamental and applied science in nanoelectronics.
What you'll do
- Develop and apply dark-field X-ray microscopy (DFXM) to analyze strain and crystalline defects in advanced microelectronic architectures with nanometer resolution.
- Perform comparative studies using complementary synchrotron techniques (e.g., Laue microdiffraction, scanning X-ray diffraction microscopy) and local probes (TEM, Raman spectroscopy).
- Conduct finite-element simulations to model mechanical behavior under thermal and operational loads, supporting experimental interpretation.
- Establish a robust methodology for multiscale strain analysis in microelectronics, bridging macroscopic and atomic-scale observations.
- Collaborate with ESRF’s ID03 beamline team and CEA-Leti’s Nanocharacterization platform to integrate DFXM into device reliability workflows.
- Publish findings in peer-reviewed journals and present results at international conferences in materials science and microelectronics.
- Contribute to the optimization of next-generation devices for quantum technologies, photonics, and energy efficiency.
Requirements
Degree required: Master's degree (or equivalent) in Materials Science, Physics, Microelectronics, or a related engineering discipline.
Degree offered: PhD
Language: English (no formal proficiency test required; fluency in scientific communication expected)
Instruction: French and English
- Proven expertise in materials characterization techniques (e.g., microscopy, spectroscopy).
- Experience with synchrotron-based experiments or similar high-resolution imaging methods.
- Familiarity with computational modeling tools (e.g., finite-element methods, molecular dynamics).
- Strong laboratory skills in nanofabrication or cleanroom environments.
- Ability to work collaboratively in interdisciplinary teams (materials science, physics, engineering).
- Proficiency in scientific writing and oral presentation in English.
- No nationality restrictions; open to international applicants.
- No prior residency requirements specified.
- No age limits mentioned.
- No prior experience caps beyond the master’s degree requirement.
Funding & terms
How to apply
Deadline: 2026-10-31
Applicants must submit their CV, a cover letter outlining their research interests and motivation, and a research proposal (if required) through the Campus France portal. Additional documents may include academic transcripts, letters of recommendation, and proof of English proficiency (if applicable).
- CV
- Cover letter
- Research proposal (if required)
- Academic transcripts (BSc + MSc)
- Letters of recommendation (number not specified)
- Proof of English proficiency (if not fluent)
Contact
Create a free profile to unlock your personal match score, the full requirements, funding details and how to apply — in English or Persian.