Epitaxial Growth of Integrated Nanostructures for Quantum Device Fabrication
Join a cutting-edge project in quantum technology development.
Best for:Best for candidates with a master's degree in a relevant field and experience in nanofabrication.
Overview
This PhD position focuses on the epitaxial growth of low effective mass semiconductor nanostructures on silicon substrates, as part of the ANR PRC PEPITO project. The candidate will work collaboratively with institutions such as LETI, NEEL, and LAAS to develop hybrid nanostructures integrated with superconductors. The research aims to enhance the quality of these materials for advanced quantum devices, particularly those based on topological superconductors. Applicants are expected to have a strong background in nanofabrication and material growth, along with proficiency in English.
What you'll do
- Develop selective growth processes for various materials, focusing on InAs and InSb.
- Characterize obtained nanostructures using AFM and SEM microscopy.
- Fabricate nanodevices employing electron beam lithography, metal evaporation, and reactive ion etching.
- Collaborate with project partners to integrate hybrid nanostructures on silicon substrates.
Requirements
Degree required: Master's degree or equivalent in a relevant field
Degree offered: PhD
Language: English; proficiency required
Instruction: English
- Experience in nanofabrication techniques
- Knowledge of material growth processes
- Proficiency in English, both written and spoken
- Must hold a master's degree or equivalent
- Experience in nanofabrication or material growth is essential
Funding & terms
How to apply
Deadline: 2026-10-22T23:59:59
Interested candidates should apply through the provided portal link. Ensure all required documents are submitted before the deadline.
- CV
- Cover letter
- Master's degree transcripts
- Reference letters
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