Development of XPS Characterization Techniques for Active Dopants in Microelectronics

This PhD position at Université Grenoble Alpes focuses on advancing characterization techniques for microelectronics using X-ray photoelectron spectroscopy (XPS). The project aims to develop a reproducible method to measure dopant concentration and their chemical states in heavily doped epitaxial layers of silicon (Si) or silicon-germanium (SiGe). The research will optimize XPS conditions, explore hard X-ray photoelectron spectroscopy (HAXPES), and integrate complementary techniques like SIMS, FTIR, XRD, and electrical measurements. The work is conducted at the Laboratoire Analyses de Surfaces et Interfaces, part of the Département des Plateformes Technologiques (LETI), and will contribute to improving device reliability in microelectronics.

• Develop and optimize XPS techniques to quantify dopant concentration (As, P, B) and identify their chemical states in heavily doped epitaxial layers.
• Evaluate the impact of growth parameters (temperature, precursors) on dopant activation and morphological integrity of thin films.
• Conduct exploratory measurements using hard X-ray photoelectron spectroscopy (HAXPES) to complement XPS analysis.
• Integrate complementary characterization techniques such as SIMS, FTIR, XRD, and electrical measurements to validate findings.
• Optimize experimental conditions and spectral post-treatment methods for reproducible and in-line characterization.
• Publish research findings in peer-reviewed journals and present results at international conferences.