PhD in Advanced Epitaxial Growth for InP-Based Photonic Integrated Circuits
Explore cutting-edge epitaxial growth techniques to advance InP-based photonic integrated circuits for next-generation optical technologies.
Best for:Best for candidates with a strong background in materials science, semiconductor physics, or electrical engineering, seeking to contribute to cutting-edge photonic technologies and manufacturing advancements.
Overview
This PhD position at Eindhoven University of Technology focuses on advancing the epitaxial growth of InP-based materials for photonic integrated circuits (PICs). The project aims to optimize material uniformity and reliability for active photonic components like lasers and amplifiers, addressing critical challenges in large-scale integration and manufacturability. The successful candidate will work with state-of-the-art equipment, including a newest-generation Aixtron epi reactor, to develop predictive models linking growth parameters to device performance. Collaboration with commercial foundry partners will validate findings, ensuring real-world applicability. The research aligns with the JePPIX Pilot Line’s pioneering work in photonic integration, offering a dynamic environment for interdisciplinary innovation.
What you'll do
- Investigate and optimize epitaxial growth processes for InP-based materials (InGaAsP and InAlGaAs) using advanced Aixtron epi reactors.
- Develop predictive models to correlate epitaxial growth parameters with electro-optical performance and reliability of photonic components.
- Analyze large datasets to identify failure mechanisms, sources of defects, and improve device yield and manufacturability.
- Collaborate with commercial foundry partners to validate research findings and ensure real-world applicability.
- Contribute to the JePPIX Pilot Line’s pioneering work in photonic integrated circuit production.
- Publish research findings in high-impact academic journals and present results at international conferences.
Requirements
Degree required: Master's degree in materials science, applied physics, electrical engineering, or a related field
Degree offered: PhD
Language: English; C1 proficiency level
Instruction: English
- In-depth knowledge of semiconductor physics and crystallography
- Experience with epitaxial growth processes, particularly Metal Organic Vapour Phase Epitaxy (MOVPE)
- Proficiency in analyzing large datasets and developing statistical models
- Understanding of complex manufacturing challenges and problem-solving skills
- Fluency in spoken and written English (C1 level)
- No specific nationality or residency restrictions mentioned
- No age or prior experience caps mentioned
Funding & terms
How to apply
Deadline: 2026-11-10
Interested candidates should submit their application through the university’s online portal. Ensure your application includes a CV, a motivation letter, and academic transcripts. Contact details for further inquiries are provided on the university’s job portal.
- CV
- Motivation letter
- Academic transcripts
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