Modeling and characterization of CFET transistors for enhanced electrical performance

This PhD position at Université Grenoble Alpes, conducted within the Silicon Components Department (LETI), focuses on investigating Complementary Field Effect Transistors (CFETs) to advance transistor miniaturization for high-performance computing. The research involves studying and optimizing channel strain engineering to improve carrier mobility and overall device electrical performance. The candidate will combine finite element numerical modeling of technological processes with experimental characterization using transmission electron microscopy coupled with precession electron diffraction (TEM-PED). Ultimately, the work aims to develop dedicated modeling tools and robust characterization methodologies to better understand strain mechanisms in stacked CMOS architectures.

• Perform numerical modeling of technological processes using finite element methods to predict strain distributions in CFET structures
• Conduct experimental characterization of crystalline deformation using transmission electron microscopy coupled with precession electron diffraction (TEM-PED)
• Analyze and quantify strain fields in transistor channels and compare experimental results with simulation outputs
• Account for complex technological stacks and critical fabrication steps such as epitaxy within modeling frameworks
• Contribute to the development of dedicated simulation tools and advanced characterization methodologies for next-generation transistors