PhD Position: Strained Germanium Quantum-Well Transistors for Integrated Cryogenic Spin Qubit Readout

The University of Basel invites applications for a PhD position focused on advancing quantum computing hardware through the development of integrated cryogenic readout devices. The project explores strained Ge/SiGe quantum-well transistors to facilitate efficient signal detection for hole-spin qubits, addressing current scaling limitations in external wiring and amplification. The successful candidate will work at the intersection of material growth, nanoscale fabrication, and cryogenic device physics. This role is part of the Swiss Nanoscience Institute (SNI) PhD school, providing a collaborative environment with access to cutting-edge research facilities. Applicants are expected to contribute to the development of scalable quantum nanoelectronics.

• Design and fabricate strained Ge/SiGe quantum-well transistor devices using nanoscale fabrication techniques.
• Perform cryogenic transport measurements to characterize device performance at low temperatures.
• Develop and test new concepts for integrated readout architectures for hole-spin qubits.
• Collaborate with research groups within the Swiss Nanoscience Institute to advance quantum hardware platforms.
• Document research findings and contribute to scientific publications and conference presentations.