PhD Position in GaN Circuits for High-Power Applications
Develop next-generation high-performance GaN-based integrated circuits for communication and radar systems.
Best for:Best for candidates with a background in electrical engineering or physics and a strong interest in semiconductor device design and high-frequency electronics.
Overview
The Fraunhofer Institute for Applied Solid State Physics (IAF) is seeking a doctoral candidate to advance high-performance systems using cutting-edge GaN technology. The successful applicant will design integrated high-frequency circuits (MMICs) based on a 100-V GaN-HEMT process for applications up to 12 GHz. The role involves optimizing device performance, exploring innovative cooling concepts like diamond top-side cooling, and conducting electromagnetic field analyses. This position offers the opportunity to work across the entire semiconductor value chain within a world-leading research environment.
What you'll do
- Design integrated high-frequency circuits using 100-V GaN-HEMT technology for applications up to 12 GHz.
- Optimize semiconductor devices for high-frequency performance at operating voltages up to 200 V.
- Research and implement innovative thermal management solutions, such as diamond top-side cooling.
- Perform electromagnetic field analyses to evaluate GaN-HEMT characteristics and refine simulation methodologies.
- Manage the full development cycle from initial design to final metrological characterization.
- Conduct measurements, analyze experimental data, and document findings for publication in journals and conference presentations.
Requirements
Degree required: Master's degree or Diploma in Electrical Engineering, Microsystems Engineering, Communications Engineering, or Physics.
Degree offered: PhD
Language: Professional proficiency in both German and English.
Instruction: German and English
- Proficiency in circuit and electromagnetic simulation software such as ADS, CST, or HFSS.
- Expertise in the metrological characterization of semiconductor devices, including S-parameter and load-pull measurements.
- Strong command of both German and English languages.
- Ability to work independently and collaboratively within a research team.
- Open to all applicants regardless of nationality, gender, or background.
- Preference given to candidates with severe disabilities in cases of equal qualification.
Funding & terms
How to apply
Applications should be submitted through the official Fraunhofer online portal. After submission, candidates will receive an automated confirmation of receipt before further contact.
- CV
- Cover letter
- Academic transcripts
Contact
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