PhD in Selective Deposition of Oxides by ALD for Microelectronics

This PhD position investigates area selective deposition (ASD) of oxide thin films for advanced microelectronics integration schemes. Hosted at CEA-LETI in collaboration with LMI CNRS/UCBLyon, the project focuses on depositing oxides such as SiO2 and Al2O3 on silicon while inhibiting growth on silicon nitride surfaces. The candidate will explore various surface modification strategies including plasma treatments and small molecular inhibitors to achieve high selectivity. Comprehensive characterization using state-of-the-art cleanroom and analytical tools will be conducted to uncover underlying physico-chemical mechanisms.

• Develop selective oxide deposition processes using atomic layer deposition techniques on 300 mm cleanroom platforms
• Explore surface inhibition approaches involving plasma treatments and small molecular inhibitors on silicon nitride
• Perform extensive thin film and surface characterizations using techniques such as ellipsometry, XRR, AFM, FTIR, SEM, and XPS
• Investigate the physico-chemical mechanisms driving selective deposition to optimize oxide thickness and selectivity
• Collaborate closely with research teams across CEA-LETI and LMI CNRS/UCBLyon to align process development with integration goals