Superconducting silicide contacts on hyperdoped silicon by NPLA

This PhD position focuses on fabricating robust quantum computing devices using silicon FD-SOI technology, specifically targeting the Josephson Field Effect Transistor (JoFET). The candidate will work at the interface between superconducting source/drain regions and semiconducting channels, utilizing nanosecond pulsed laser annealing (NPLA) to achieve extreme doping concentrations. Responsibilities include forming superconducting silicides with minimal thermal budget, analyzing dopant distribution using atom probe tomography, and evaluating contact transparency via low-temperature electrical measurements. The successful applicant will be based in France and integrated into a major research laboratory environment.

• Develop highly transparent superconducting silicide contacts on a 300 mm production line using NPLA
• Optimize doping concentrations in silicon while minimizing thermal budget and dopant deactivation
• Investigate mechanical stresses during silicide formation and their effects on the superconducting critical temperature
• Assess dopant distribution at the atomic scale using advanced Atom Probe Tomography
• Perform low-temperature electrical measurements on fabricated junctions and transistors to evaluate contact transparency