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Materials Science and Microelectronics● OpenPreview

PhD on Ferroelectric and Antiferroelectric HfO2 Capacitors

Investigating and modeling domain dynamics in doped HfO2 thin-film capacitors for advanced energy storage and memory.

Best for:Best for graduate researchers with a background in microelectronics, materials science, or solid-state physics seeking to study advanced dielectric materials.

UNIVERSITE GRENOBLE ALPES · Grenoble, France · R1 · First-stage researcher
More professors at UNIVERSITE GRENOBLE ALPES
energy-storagemicroelectronicssemiconductor-devicesmemsmaterials-science
Deadline
Oct 31, 2026
16 days
Funding
Salaried
CEA contract
Start date
2026-09-01
Fixed-term
Location
Grenoble
France

Overview

This PhD position offers an exciting opportunity to explore novel supercapacitor and hybrid energy storage technologies at Université Grenoble Alpes, hosted within the CEA LETI laboratory. The research centers on the experimental investigation and physical modeling of thin-film hafnium oxide (HfO2) capacitors with intentional doping to achieve ferroelectric or antiferroelectric properties. The successful candidate will fabricate metal-insulator-metal capacitors, conduct comprehensive electrical characterizations, and develop physical models describing domain relaxation under electrical excitation. The overall goal is to optimize energy density and conversion efficiency for CMOS-compatible integrated systems.

ferroelectricantiferroelectrichafnium oxidecapacitorsthin filmsdomain dynamicsenergy storageCMOS compatibility

What you'll do

  • Fabricate metal-insulator-metal capacitors using doped HfO2 integrated on silicon substrates
  • Perform systematic electrical measurements including current-voltage and polarization-electric field characterizations
  • Analyze minor hysteresis loops to determine activation energy distributions and domain relaxation dynamics
  • Develop or refine physical models to describe ferroelectric and antiferroelectric transitions under cyclic electrical excitation
  • Optimize recoverable energy density and conversion efficiency of the developed capacitors

Requirements

Degree required: Master's degree or equivalent in Materials Science, Microelectronics, Physics, or related engineering discipline

Degree offered: PhD

Language: English: None specified; French: None specified

Instruction: English / French

Required skills
  • Background in thin-film integration and dielectric material engineering
  • Experience with electrical characterization techniques for semiconductor or capacitor devices
  • Understanding of solid-state physics or ferroelectric material behavior
  • Analytical and physical modeling capabilities for electronic devices
Nice to have
Prior hands-on experience with cleanroom fabrication processesFamiliarity with HfO2 or similar high-k dielectric materialsProgramming skills for data analysis and physical simulation

Funding & terms

Type
Salaried
Amount
CEA contract
Duration
36 months
Programme
CEA
CEA

How to apply

Deadline: 2026-10-31

Interested applicants should review the position details and submit their application documents through the official Campus France portal or contact the designated supervisor directly via email.

Documents required
  • CV
  • Cover letter
  • Academic transcripts
↗Apply on site

Contact

JC
Prof.
Jacopo Cele
Département Composants Silicium (LETI)
Lab
Laboratoire des Composants pour la RF et l'Energie
UNIVERSITE GRENOBLE ALPES
France
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