PhD Monitor
/Detail
Electrical and Materials Engineering● OpenPreview

PhD Position in Ferroelectric Memcapacitors for Cryogenic Quantum Control

Develop cryogenic-compatible ferroelectric memcapacitors to advance scalable semiconductor quantum computing at Université de Sherbrooke.

Best for:Best for graduate engineers with a background in microfabrication, electrical characterization, or materials science interested in hardware for quantum computing.

Université de Sherbrooke · Sherbrooke, Canada · R1 · First-stage researcher
More professors at Université de Sherbrooke
ferroelectric memcapacitorscryogenic electronicsquantum computing hardwaresemiconductor qubitsmicrofabrication
Deadline
Mar 31, 2027
161 days
Funding
—
Start date
2027-05-03
Full-time
Location
Sherbrooke
Canada

Overview

The Université de Sherbrooke invites applications for a doctoral research position focused on exploring ferroelectric memcapacitor functionality in deep-cryogenic environments for quantum computing control electronics. Operating jointly within the Interdisciplinary Institute for Technological Innovation (3IT) and the Quantum Institute (IQ), the successful candidate will design, fabricate, and test novel HZO-based devices integrated with superconducting electrodes. The project aims to address major bottlenecks in scaling semiconductor qubits by implementing compact, low-power adaptive control directly at millikelvin temperatures. Candidates will receive multidisciplinary training in microfabrication, nanomaterials characterization, and ultra-low temperature electrical measurements under the supervision of Dominique Drouin.

PhDcryogenicsmemcapacitorsquantum computingnanofabricationelectrical characterizationsuperconducting electrodes

What you'll do

  • Design and fabricate cryogenic-compatible HfZrO2 ferroelectric memcapacitors and crossbar arrays featuring superconducting electrodes.
  • Execute cleanroom micro- and nanofabrication processes including photolithography, dry etching, and passivation.
  • Conduct physical, chemical, and morphological characterizations using AFM, SEM, and TEM techniques.
  • Perform comprehensive electrical tests at room temperature and deep-cryogenic temperatures down to approximately 20 mK.
  • Evaluate device performance metrics such as capacitive hysteresis, retention, endurance, and noise characteristics.

Requirements

Degree required: Master Degree or equivalent

Degree offered: PhD

Language: English; good working proficiency

Instruction: English

Required skills
  • Background in electrical engineering, materials engineering, or a related discipline
  • Experience with cleanroom micro- and nanofabrication processes
  • Familiarity with materials characterization methods such as AFM, SEM, or TEM
  • Understanding of electrical measurement principles and instrumentation
Nice to have
Prior research experience in cryogenic systems or low-temperature physicsKnowledge of semiconductor device physics and CMOS compatibilityExperience with thin-film deposition and ferroelectric materials

Funding & terms

Type
Unknown
Amount
—
Duration
—
Programme
Other EU programme

How to apply

Deadline: 2027-03-31 (America/Toronto)

Interested applicants should submit their application materials via email to the designated address with the appropriate subject line referencing the position title.

Documents required
  • CV
  • Cover letter
  • Academic transcripts
✉Apply by email

Contact

DD
Prof.
Dominique Drouin
Interdisciplinary Institute for Technological Innovation
Lab
Quantum Institute
Université de Sherbrooke
Other EU programmeCanada
See the full position

Create a free profile to unlock your personal match score, the full requirements, funding details and how to apply — in English or Persian.

No card · 10 free AI match scores
Ready to apply?
161 days until the deadline — open this position on its website.