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Materials Science● OpenPreview

PhD Position: CdTe for Medical Radiography and Electrical Property Control

Develop advanced CdTe crystal growth and characterization processes for next-generation medical X-ray detectors.

Best for:Best for materials science or physics graduates with a strong interest in semiconductor crystal growth and device characterization.

Université Grenoble Alpes · Grenoble, France · R1 · First-stage researcher
More professors at Université Grenoble Alpes
Semiconductor PhysicsCrystal GrowthMedical ImagingDoping MechanismsX-ray Detectors
Deadline
Nov 30, 2026
46 days
Funding
Salaried
CEA
Start date
2026-10-01
Fixed-term
Location
Grenoble
France

Overview

This doctoral research project focuses on optimizing CdTe semiconductor materials for use in direct-conversion medical radiography detectors. The candidate will work within the Laboratoire des Matériaux pour la photonique at CEA-LETI to master single-crystal growth processes and tailor material properties for specific clinical applications. Key activities include controlled atmosphere annealing, advanced doping mechanism characterization, and the fabrication and testing of prototype devices under X-ray flux. This multidisciplinary position offers the opportunity to bridge fundamental materials science with practical medical imaging technology development.

CdTeSemiconductorsMedical RadiographyMaterials CharacterizationCrystal GrowthCEA-LETI

What you'll do

  • Perform ex-situ annealing of CdTe samples under controlled atmospheres to analyze electrical property changes.
  • Conduct advanced material characterization to investigate and understand doping mechanisms in CdTe crystals.
  • Fabricate simplified semiconductor devices for performance testing.
  • Evaluate material performance by testing fabricated devices under X-ray flux.
  • Integrate findings from material development, characterization, and device testing to advance CdTe technology.

Requirements

Degree required: Master's degree in Materials Science, Physics, or a related field.

Degree offered: PhD

Language: No specific language proficiency level required.

Instruction: French/English

Required skills
  • Strong background in semiconductor materials science.
  • Experience with material characterization techniques.
  • Ability to conduct multidisciplinary research involving fabrication and testing.
  • Analytical skills for interpreting electrical property data.
Nice to have
Prior experience with crystal growth processes.Familiarity with X-ray detector technology or medical imaging hardware.Experience with semiconductor device fabrication.

Funding & terms

Type
Salaried
Amount
CEA
Duration
36 months
Programme
CEA
CEA

How to apply

Deadline: 2026-11-30

Interested candidates should contact the supervisor via email with their application materials. Ensure all required documents are prepared for submission as per the institutional guidelines.

Documents required
  • CV
  • Cover letter
✉Apply by email

Contact

Timotée Journot· Supervisor

timotee.journot@cea.fr

04 38 78 03 38

TJ
Prof.
Timotée Journot
Département des Plateformes Technologiques (LETI)
Lab
Laboratoire des Matériaux pour la photonique
Université Grenoble Alpes
France
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