PhD Position in Process Technology for Novel Digital III-V Semiconductors
Join Fraunhofer IAF to advance GaN-HEMT technologies for next-generation digital semiconductor devices.
Best for:Best for physicists, electrical engineers, or materials scientists with a master’s degree in semiconductor physics, micro/nanotechnology, or related fields, interested in experimental research and process development for next-gen digital semiconductor devices.
Overview
This PhD position at Fraunhofer IAF in Freiburg, Germany, focuses on pioneering novel digital III-V semiconductor concepts, specifically GaN-HEMTs. The successful candidate will conduct cutting-edge research in process technology, including etching, lithography, epitaxy, and device development, to enhance high-frequency digital switching and amplification components. The work involves hands-on experimentation in cleanroom environments, collaboration with national and international partners, and contributing to applied research projects. The role is ideal for physicists, electrical engineers, or materials scientists with a strong foundation in semiconductor physics and micro/nanotechnology, seeking to drive innovation in semiconductor device fabrication.
What you'll do
- Develop and operate advanced semiconductor processing techniques in cleanroom environments, including etching, lithography, and epitaxy.
- Investigate and optimize novel GaN-HEMT devices for high-frequency digital applications and amplification systems.
- Collaborate with interdisciplinary teams to integrate and test new semiconductor modules in complex electronic systems.
- Contribute to national and international research projects, fostering partnerships between academia and industry.
- Conduct experimental research to deepen the understanding of process-module functionality and device performance.
- Present research findings at conferences and contribute to scientific publications.
Requirements
Degree required: Master’s or equivalent degree in Physics, Electrical Engineering, Micro/Nano Systems Technology, or a related field
Degree offered: PhD
Language: German: very good; English: good (for international collaboration)
Instruction: German (primary), English (secondary)
- Proven expertise in semiconductor physics, micro/nanotechnology, or related disciplines
- Practical experience in cleanroom process technology or III-V semiconductor fabrication
- Strong background in etching, lithography, epitaxy, or semiconductor device development
- Self-directed, structured, and scientific approach to research
- Excellent communication and teamwork skills for collaboration in international environments
- No specific nationality or residency restrictions mentioned
- No age or prior experience caps specified
Funding & terms
How to apply
Deadline: 2026-09-04
Apply online via the Fraunhofer Talent Community portal. Submit your CV, cover letter, and relevant academic transcripts. After submission, you will receive an automatic confirmation of receipt. The recruitment team will then contact you to proceed with the application process.
- CV
- Cover letter
- Master’s degree transcripts and diploma
- Proof of language proficiency (if applicable)
Contact
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