Thermal Characterization of GaN-Based Components Using Raman Microtemperatures
Develop innovative Raman thermometry techniques to evaluate the self-heating and reliability of advanced gallium nitride power transistors.
Best for:Best for electronics engineering graduates with a strong experimental background and an interest in semiconductor thermal characterization.
Overview
This PhD position at the GREYC laboratory within the University of Caen Normandy investigates the thermal behavior of gallium nitride (GaN) power and microwave components under operational conditions. The doctoral candidate will utilize and improve Raman spectroscopy coupled with cerium oxide nanoparticle micro-thermometers to measure self-heating temperatures near active electronic channels. The research aims to optimize thermal characterization procedures for aerospace, telecommunications, and electric vehicle power systems. The successful applicant will conduct experimental testing, develop deposition methods for micro-thermometers, and build thermal models to predict component reliability.
What you'll do
- Improve the distribution and application methods of cerium oxide nanoparticle micro-thermometers on semiconductor surfaces
- Design and develop an innovative deposition system for micro-thermometers on industrial measurement boards
- Perform experimental thermal characterization of GaN power and microwave transistors under continuous and pulsed operating regimes
- Extend the operational characterization workflow from high-frequency radar and satellite components to electric vehicle power converters
- Develop comprehensive thermal models to understand and predict the thermal behavior and degradation of power components
Requirements
Degree required: Master's degree (BAC + 5) in Electronics or a related field
Degree offered: PhD
Language: French: C1 (advanced); English: B2 (upper-intermediate)
Instruction: French
- Solid academic background in electronics
- Demonstrated experimental capabilities and hands-on laboratory experience
- Understanding of semiconductor device physics and thermal properties
- Must hold a master's degree or equivalent qualification equivalent to a BAC + 5 level
Funding & terms
How to apply
Deadline: 2026-12-16
Interested candidates should submit their application through the official portal before the specified deadline. Ensure all required academic transcripts, CVs, and statements are prepared in accordance with the doctoral school guidelines.
- CV
- Cover letter
- BSc + MSc transcripts
Contact
Yannick Guhel· Professor
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