PhD on Reliability and Dynamic Properties of GaN HEMTs
Investigate charge trapping and degradation mechanisms in GaN high electron mobility transistors for next-generation power electronics.
Best for:Best for graduate engineers with a strong background in semiconductor physics, electronic devices, and electrical characterization.
Overview
This PhD project explores the fundamental dynamics of charge carriers and reliability challenges in Gallium Nitride High Electron Mobility Transistors (GaN HEMTs) to support high-efficiency power electronics in data centers. Hosted at CEA-Leti in collaboration with a multidisciplinary research team, the candidate will analyze electrical behavior under various operating conditions and study the physical origins of on-resistance and threshold voltage drifts. The findings will directly contribute to optimizing device architectures and enhancing the robustness of power conversion systems. Applicants are expected to engage in process engineering, advanced electrical testing, and TCAD simulations.
What you'll do
- Investigate the physical origins of on-resistance and threshold voltage drifts in GaN HEMTs
- Analyze the electrical behavior of transistors under diverse operating conditions
- Identify degradation mechanisms and pathways to enhance device robustness
- Perform advanced electrical testing and TCAD simulations
- Collaborate with experts in semiconductor material engineering and device simulation
- Contribute to the optimization of device architectures for sustainable power electronics
Requirements
Degree required: Master's degree or equivalent in Electrical Engineering, Microelectronics, Physics, or related field
Degree offered: PhD
Language: English; French is not required
Instruction: English
- Strong background in semiconductor physics and electronic devices
- Experience with electrical characterization techniques
- Familiarity with device simulation or TCAD tools
- Analytical and problem-solving skills for degradation analysis
Funding & terms
How to apply
Deadline: 2026-11-30
Submit your application through the official portal with all required academic and professional documents before the deadline.
- CV
- Cover letter
- Academic transcripts
Contact
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