Growth of 2D Ferromagnetic Chalcogenide Materials for Spintronics

This doctoral position at Université Grenoble Alpes, in collaboration with CEA-Leti, focuses on the industrial-scale epitaxial growth of 2D ferromagnetic chalcogenide materials for energy-efficient spintronic memories. The selected candidate will master van der Waals epitaxy of thin films such as Fe-Ge(Ga)Te2 or GeMnTe on 300 mm silicon substrates. The research involves integrating these ferromagnetic sources with spin-charge conversion layers and evaluating their compatibility with existing CMOS technology. The successful applicant is expected to conduct rigorous experimental work, publish findings in peer-reviewed venues, and contribute to the advancement of next-generation low-power memory devices.

• Perform van der Waals epitaxial growth of 2D ferromagnetic thin films on 300 mm Si substrates.
• Investigate and optimize material properties including Curie temperature and spin polarization.
• Integrate ferromagnetic layers in situ with spin-charge conversion layers and topological insulators.
• Characterize structural, magnetic, and electronic properties of grown semiconductor and metallic heterostructures.
• Collaborate with industrial and academic partners within the research laboratory framework.
• Prepare scientific reports, conference presentations, and peer-reviewed journal publications.