PhD on Co-Optimization for RF Transistors on Nanometer Technologies

This doctoral position focuses on the integrated co-optimization of materials, fabrication processes, and device architectures to design high-performance RF transistors on advanced nanometer-scale technologies. Based at Université Grenoble Alpes in collaboration with CEA-Leti, the research combines experimental development, characterization, and advanced TCAD simulations. The successful candidate will investigate planar and 3D device platforms such as FD-SOI, GAA, and CFET to improve figures of merit like transit frequency and noise behavior. The project aims to establish technology guidelines for future energy-efficient communication and IoT applications.

• Design and optimize advanced RF transistor architectures using both experimental and simulation approaches.
• Perform structural and electrical characterization of fabricated semiconductor devices.
• Conduct advanced TCAD simulations to evaluate integration schemes such as FD-SOI, GAA, and CFET.
• Investigate the impact of spacers, gate stacks, junction placement, and source/drain materials on RF efficiency.
• Analyze key RF performance metrics including transit frequency, maximum oscillation frequency, noise, and linearity.
• Contribute to project reporting, technical documentation, and dissemination of research findings in scientific venues.