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Engineering● OpenPreview

PhD in In-Memory Computing Based on FeFET for Low-Power Embedded AI

Develop energy-efficient embedded artificial intelligence systems using FeFET-based in-memory computing.

Best for:Best for graduate engineers with a strong background in microelectronics, semiconductor devices, or embedded artificial intelligence.

· France · R1 · First-stage researcher
In-memory computingFeFETEmbedded artificial intelligenceLow-power electronicsHardware-software co-design
Deadline
Nov 21, 2026
30 days
Funding
Salaried
Contrat Doctoral
Start date
ASAP
Full-time
Location
France
on-site

Overview

This doctoral position focuses on in-memory computing architectures utilizing ferroelectric field-effect transistors (FeFET) to support low-power embedded artificial intelligence applications. The project aims to address energy constraints in modern edge computing through innovative hardware design and algorithm-hardware co-design. The successful candidate will conduct experimental and theoretical research within a specialized laboratory environment in France. Responsibilities include designing device-level configurations, implementing circuit simulations, and publishing findings in academic venues.

PhDFeFETIn-memory computingEmbedded AIMicroelectronicsLow-power design

What you'll do

  • Design and model FeFET-based in-memory computing architectures for low-power artificial intelligence applications
  • Perform electrical characterization and circuit simulations to evaluate performance and energy efficiency
  • Collaborate with research team members on hardware-software co-design strategies
  • Draft scientific manuscripts and present research findings at international conferences and in peer-reviewed journals
  • Contribute to ongoing laboratory projects and engage with academic and industrial partners

Requirements

Degree required: Master of Science in Microelectronics, Electrical Engineering, Nanotechnology, or related field

Degree offered: PhD

Language: Proficiency in English; French knowledge is a plus but not strictly required

Instruction: English / French

Required skills
  • Strong background in microelectronics and semiconductor device physics
  • Experience with circuit simulation tools and hardware design
  • Knowledge of artificial intelligence hardware accelerators or edge AI concepts
  • Demonstrated ability to write technical reports and scientific papers
Nice to have
Prior experience with ferroelectric devices or emerging non-volatile memoriesProficiency in programming languages such as Python, C, or hardware description languages like Verilog/VHDLHands-on laboratory experience in semiconductor characterization
Eligibility
  • Hold or be about to complete a Master's degree equivalent to a European MSc

Funding & terms

Type
Salaried
Amount
Contrat Doctoral
Duration
3 years
Programme
Contrat Doctoral
French Doctoral Funding

How to apply

Deadline: 2026-11-21

Interested applicants must submit their application file through the official portal before the deadline. The submission typically requires academic transcripts, a detailed curriculum vitae, and reference letters.

Documents required
  • CV
  • Cover letter
  • MSc transcripts
  • Reference letters
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