Research Fellow in Molecular Beam Epitaxy of III-V/Si Materials
Join a leading EPSRC-funded programme to advance quantum dot-based silicon photonics for next-generation communication and sensing technologies.
Best for:Best for experienced researchers with expertise in III-V and Group-IV MBE, semiconductor materials, and quantum dot lasers seeking to contribute to cutting-edge silicon photonics research.
Overview
This position offers two Research Fellowships at University College London (UCL) within the Department of Electronic & Electrical Engineering. The successful candidates will contribute to the EPSRC Programme Grant QUDOS, a collaborative effort with Cardiff University, Cambridge, and Southampton to develop integrated photonic technologies using III-V compound semiconductors on silicon. The role focuses on epitaxial growth and development of advanced semiconductor materials and optoelectronic devices using molecular beam epitaxy (MBE). Research Fellows will conduct independent research, maintain advanced MBE facilities, and drive the broader objectives of scalable monolithic integration for quantum dot-based silicon photonics, aiming to revolutionize communication, sensing, and information processing technologies.
What you'll do
- Conduct independent research on epitaxial growth and development of advanced III-V and silicon-based semiconductor materials using molecular beam epitaxy (MBE).
- Develop and optimize new device structures for optoelectronic applications, including quantum dot lasers.
- Operate, maintain, and troubleshoot advanced MBE facilities to ensure high-quality material growth.
- Collaborate with interdisciplinary teams to advance the QUDOS programme’s goals in scalable monolithic integration of photonic technologies.
- Analyze experimental data and publish findings in high-impact journals and conference proceedings.
- Contribute to broader research objectives, including the development of next-generation photonic integrated circuits for communication and sensing applications.
Requirements
Degree required: PhD in a relevant area of physical sciences or engineering (e.g., materials science, electrical engineering, theoretical physics, or applied mathematics).
Language: English; proficiency sufficient for academic research and publication.
Instruction: English
- Proven expertise in operating and maintaining III-V solid-source MBE and/or Group-IV MBE facilities.
- Strong track record in MBE growth of III-V compound semiconductor materials or Group-IV materials.
- In-depth knowledge of quantum dot (QD) laser mechanisms and heteroepitaxial growth techniques.
- Experience with data analysis, publication of research results in peer-reviewed journals, and technical report writing.
- No explicit nationality or residency restrictions mentioned.
- Prior experience in semiconductor materials research or MBE is mandatory.
Funding & terms
How to apply
Deadline: 2026-10-16T23:59:59 (Europe/London)
Applicants must submit their application through the UCL job portal. A job description and person specification are available at the application link. Contact details for inquiries are provided on the application page.
- Curriculum Vitae (CV)
- Cover letter
- Research statement or proposal
- Transcripts of academic qualifications (BSc, MSc, PhD)
- Contact details for three referees
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